|
DRAM
|
|
DDR5
|
| DDR5-5600 2Gx8 (16Gb) |
MT60B2G8HB-56B:G |
Micron |
3 days |
| DDR5-4800 2Gx8 (16Gb) |
H5CG48MEBDX014N |
SK hynix |
Booking |
| DDR5-5600 1Gx16 (16Gb) |
H5CG46AGBDX017N |
SK hynix |
1 day |
|
DDR4
|
| DDR4-3200 512Mx8 (4Gb) |
K4A4G085WF-BCWE |
Samsung |
2 days |
| DDR4-3200 512Mx16 (8Gb) |
H5AN8G6NDJR-XNC |
SK hynix |
4 days |
| DDR4-3200 512Mx16 (8Gb) |
K4A8G165WB-BIWE |
Samsung |
2 days |
| DDR4-3200 512Mx16 (8Gb) |
MT40A512M16TB-062E:R |
Micron |
4 days |
| DDR4-3200 512Mx16 (8Gb) |
NT5AD512M16C4-JR |
Nanya |
4 days |
| DDR4-3200 2Gx8 (16Gb) |
H5ANAG8NCJR-XNC |
SK hynix |
4 days |
| DDR4-3200 2Gx8 (16Gb) |
K4AAG085WA-BCWE |
Samsung |
2 days |
| DDR4-3200 2Gx8 (16Gb) |
MT40A2G8SA-062E:F |
Micron |
7 days |
| DDR4-3200 256Mx16 (4Gb) |
MT40A256M16TB-062E:G |
Micron |
3 days |
| DDR4-3200 1Gx8 (8Gb) Ind |
MT40A1G8SA-062E IT:E |
Micron |
4 days |
| DDR4-3200 1Gx8 (8Gb) |
H5AN8G8NDJR-XNC |
SK hynix |
2 days |
| DDR4-3200 1Gx8 (8Gb) |
K4A8G085WC-BCWE |
Samsung |
2 days |
| DDR4-3200 1Gx8 (8Gb) |
K4A8G085WC-BIWE |
Samsung |
Booking |
| DDR4-3200 1Gx8 (8Gb) |
MT40A1G8SA-062E:R |
Micron |
4 days |
| DDR4-3200 1Gx8 (8Gb) |
K4A8G085WE-BCWE |
Samsung |
3 days |
| DDR4-3200 1Gx16 (16Gb) |
H5ANAG6NCJR-XNC |
SK hynix |
1 day |
| DDR4-3200 1Gx16 (16Gb) |
K4AAG165WA-BCWE |
Samsung |
4 days |
| DDR4-3200 1Gx16 (16Gb) |
MT40A1G16TB-062E:F |
Micron |
booking |
| DDR4-2666 512Mx8 (4Gb) |
NT5AD512M8D3-HR |
Nanya |
3 days |
| DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BCTD |
Samsung |
4 days |
| DDR4-2400 512Mx8 (4Gb) |
K4A4G085WE-BCRC |
Samsung |
2 days |
| DDR4-3200 2Gx8 (16Gb) Ind |
MT40A2G8SA-062E IT:F |
Micron |
4 days |
|
DDR3
|
| DDR3-1600 256Mx16 (4Gb) 1.35V |
H5TC4G63EFR-PBA |
SK hynix |
1 day |
| DDR3-1600 512Mx8 (4Gb) 1.35V |
K4B4G0846E-BYK0 |
Samsung |
2 days |
| DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
MT41K128M16JT-125 AAT:K |
Micron |
4 days |
| DDR3-1600 128Mx16 (2Gb) |
MT41K128M16JT-125:K |
Micron |
1 day |
| DDR3-1600 128Mx16 (2Gb) 1.35V |
W632GU6NB-12 |
Winbond |
4 days |
| DDR3-2133 256Mx16 (4Gb) |
K4B4G1646E-BCNB |
Samsung |
4 days |
| DDR3-2133 128Mx16 (2Gb) |
K4B2G1646F-BCNB |
Samsung |
4 days |
| DDR3-2133 128Mx16 (2Gb) |
MT41J128M16JT-093:K |
Micron |
1 day |
| DDR3-1866 64Mx16 (1Gb) Ind 1.35V |
MT41K64M16TW-107 IT:J |
Micron |
4 days |
| DDR3-1866 64Mx16 (1Gb) 1.35V |
MT41K64M16TW-107:J |
Micron |
3 days |
| DDR3-1866 512Mx8 (4Gb) 1.35V |
H5TC4G83EFR-RDAR |
SK hynix |
4 days |
| DDR3-1866 512Mx8 (4Gb) 1.35V |
K4B4G0846E-BYMA |
Samsung |
1 day |
| DDR3-1866 512Mx8 (4Gb) 1.35V |
MT41K512M8DA-107:P |
Micron |
2 days |
| DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
MT41K512M16VRN-107 IT:P |
Micron |
4 days |
| DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
MT41K512M16VRP-107 IT:P |
Micron |
4 days |
| DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
K4B4G1646E-BMMA |
Samsung |
1 day |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
H5TC4G63EFR-RDA |
SK hynix |
1 day |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107 AAT:P |
Micron |
booking |
| DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
MT41K256M16TW-107 IT:P |
Micron |
Booking |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107:P |
Micron |
4 days |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
NT5CC256M16ER-EK |
Nanya |
4 days |
| DDR3-1866 128Mx16 (2Gb) AutoG 1.35V |
K4B2G1646F-BHMA |
Samsung |
booking |
| DDR3-1866 128Mx16 (2Gb) 1.35V |
K4B2G1646F-BYMA |
Samsung |
4 days |
| DDR3-1866 128Mx16 (2Gb) 1.35V |
MT41K128M16JT-107:K |
Micron |
4 days |
| DDR3-1866 128Mx16 (2Gb) 1.35V |
NT5CC128M16JR-EK |
Nanya |
4 days |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
H5TC4G63EFR-RDAR |
SK hynix |
4 days |
|
DDR2
|
| DDR2-800 256Mx8 (2Gb) |
MT47H256M8EB-25E:C |
Micron |
4 days |
| DDR2-800 128Mx16 (2Gb) |
MT47H128M16RT-25E:C |
Micron |
4 days |
| DDR2-800 64Mx16 Pb-Free |
K4T1G164QJ-BCE7 |
Samsung |
4 days |
|
LPDDR5
|
| LPDDR5-6400 x32 (32Gb) |
K3LKBKB0BM-MGCP |
Samsung |
3 days |
|
LPDDR4
|
| LPDDR4X-4266 x32 (8Gb) |
K4U8E3S4AD-MGCL |
Samsung |
3 days |
| LPDDR4-4266 1Gx32 (32Gb) |
MT53D1024M32D4DT-046 WT:D |
Micron |
4 days |
| LPDDR4-3733 1Gx32 (32Gb) |
MT53D1024M32D4DT-053 WT:D |
Micron |
4 days |
| LPDDR4-4266 (16Gb) |
H9HCNNNBKUMLXR-NEE |
SK hynix |
4 days |
| LPDDR4-3733 512Mx32 (16Gb) |
K4F6E3S4HM-MGCJ |
Samsung |
4 days |
| LPDDR4X-4266 x32 (16Gb) |
K4U6E3S4AA-MGCL |
Samsung |
4 days |
| LPDDR4-4266 512Mx32 (16Gb) |
MT53D512M32D2DS-046 AAT:D |
Micron |
booking |
| LPDDR4-3733 512Mx32 (16Gb) |
MT53D512M32D2DS-053 WT:D |
Micron |
4 days |
| LPDDR4-4266 256Mx32 (8Gb) |
K4F8E3S4HD-GFCL |
Samsung |
Booking |
| LPDDR4X-4266 x32 (16Gb) |
K4U6E3S4AB-MGCL |
Samsung |
3 days |
| LPDDR4X-4266 x32 (64Gb) |
K4UCE3Q4AB-MGCL |
Samsung |
4 days |
| LPDDR4-4266 512Mx32 (16Gb) |
MT53E512M32D1NP-046 WT:B |
Micron |
4 days |
| LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2FW-046 IT:B |
Micron |
booking |
| LPDDR4X-4266 x32 (32Gb) |
K4UBE3D4AB-MGCL |
Samsung |
3 days |
|
Mobile/Low-Power DDR (LPDDR)
|
| LPDDR-200 32Mx16 (512Mb) Ind |
MT46H32M16LFBF-5 IT:C |
Micron |
4 days |
| LPDDR-400 64Mx16 (1Gb) Ind |
MT46H64M16LFBF-5 IT:B |
Micron |
booking |
| LPDDR-400 32Mx32 (1Gb) Ind |
MT46H32M32LFB5-5 IT:B |
Micron |
4 days |
| LPDDR-333 16Mx32 VFBGA Low Power |
MT46H16M32LFB5-5 IT:C |
Micron |
booking |
|
High Bandwidth Memory (HBM)
|
| HBM2 2Gb/s 8Gb |
KHA884901X-MC12T |
Samsung |
3 days |
| HBM2 2Gb/s 8Gb |
KHA884901X-MC12TIF |
Samsung |
3 days |
|
GDDR6 SDRAM/SGRAM
|
| GDDR6 16Gb/s 256Mx32 (8Gb) |
K4Z80325BC-HC16 |
Samsung |
3 days |
| GDDR6 21Gb/s 256Mx32 (8Gb) |
MT61K256M32JE-21:T |
Micron |
3 days |
| GDDR6 20Gb/s 512Mx32 (16Gb) |
K4ZAF325BC-SC20 |
Samsung |
booking |
| GDDR6 512Mx32 (16Gb) |
MT61K512M32KPA-16:C |
Micron |
booking |
|
Mobile SDRAM (LPSDR)
|
| SD 4Mx32-7 133MHz |
MT48LC4M32B2B5-7IT:G |
Micron |
4 days |
| SD 2Mx32-6 166MHz |
MT48LC2M32B2P-6A IT:J |
Micron |
4 days |
