|
DRAM
|
|
DDR5
|
| DDR5-5600 2Gx8 (16Gb) |
H5CG48AGBDX018N |
SK hynix |
3 days |
|
DDR4
|
| DDR4-3200 512Mx16 (8Gb) Ind |
MT40A512M16LY-062E IT:E |
Micron |
booking |
| DDR4-3200 512Mx16 (8Gb) |
MT40A512M16LY-062E:E |
Micron |
booking |
| DDR4-3200 2Gx8 (16Gb) |
H5ANAG8NCJR-XNC |
SK hynix |
4 days |
| DDR4-3200 2Gx8 (16Gb) Ind |
MT40A2G8JC-062E IT:E |
Micron |
booking |
| DDR4-3200 2Gx8 (16Gb) |
MT40A2G8VA-062E:B |
Micron |
booking |
| DDR4-3200 1Gx8 (8Gb) Ind |
MT40A1G8SA-062E IT:E |
Micron |
booking |
| DDR4-3200 1Gx8 (8Gb) |
H5AN8G8NDJR-XNC |
SK hynix |
2 days |
| DDR4-3200 1Gx8 (8Gb) |
MT40A1G8SA-062E:R |
Micron |
booking |
| DDR4-3200 1Gx16 (16Gb) Ind |
MT40A1G16KD-062E IT:E |
Micron |
booking |
| DDR4-3200 1Gx16 (16Gb) Ind |
MT40A1G16TB-062E IT:F |
Micron |
booking |
| DDR4-2666 512Mx16 (8Gb) |
H5AN8G6NCJR-VKC |
SK hynix |
3 days |
| DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BCTD |
Samsung |
2 days |
| DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BITD |
Samsung |
5 days |
| DDR4-2666 512MX16 (8Gb) |
MT40A512M16LY-075:E |
Micron |
booking |
| DDR4-2666 256Mx16 (4Gb) |
K4A4G165WF-BCTD |
Samsung |
4 days |
| DDR4-2400 512Mx16 (8Gb) |
MT40A512M16JY-083E:B |
Micron |
booking |
| DDR4-2400 256Mx16 (4Gb) |
H5AN4G6NBJR-UHC |
SK hynix |
1 day |
| DDR4-2400 256Mx16 (4Gb) |
K4A4G165WE-BCRC |
Samsung |
Re-confirm |
| DDR4-2400 256Mx16 (4Gb) |
MT40A256M16GE-083E:B |
Micron |
booking |
|
DDR3
|
| DDR3-1600 512Mx16 (8Gb) 1.35V |
MT41K512M16HA-125:A |
Micron |
booking |
| DDR3-1600 256Mx16 (4Gb) 1.35V |
H5TC4G63EFR-PBA |
SK hynix |
1 day |
| DDR3-1600 512Mx8 (4Gb) 1.35V |
MT41K512M8RH-125:E |
Micron |
booking |
| DDR3-1600 128Mx16 (2Gb) |
MT41J128M16JT-125:K |
Micron |
booking |
| DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
MT41K128M16JT-125 AAT:K |
Micron |
booking |
| DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
MT41K128M16JT-125 AIT:K |
Micron |
booking |
| DDR3-1600 128Mx16 (2Gb) |
MT41K128M16JT-125:K |
Micron |
7 days |
| DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
MT41K128M16JT-125 IT:K |
Micron |
booking |
| DDR3-2133 128Mx16 (2Gb) |
MT41J128M16JT-093:K |
Micron |
booking |
| DDR3-1866 64Mx16 (1Gb) 1.35V |
MT41K64M16TW-107:J |
Micron |
booking |
| DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
MT41K512M8DA-107 IT:P |
Micron |
booking |
| DDR3-1866 512Mx8 (4Gb) 1.35V |
MT41K512M8DA-107:P |
Micron |
booking |
| DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
MT41K512M16VRN-107 IT:P |
Micron |
booking |
| DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
MT41K512M16VRP-107 IT:P |
Micron |
booking |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646E-BYMA |
Samsung |
5 days |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107 AAT:P |
Micron |
booking |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107 AIT:P |
Micron |
booking |
| DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
MT41K256M16TW-107 IT:P |
Micron |
booking |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107 XIT:P |
Micron |
booking |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107:P |
Micron |
booking |
| DDR3-1866 128Mx16 (2Gb) 1.35V |
K4B2G1646F-BYMA |
Samsung |
5 days |
| DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
MT41K128M16JT-107 IT:K |
Micron |
booking |
| DDR3-1866 128Mx16 (2Gb) 1.35V |
MT41K128M16JT-107:K |
Micron |
booking |
| DDR3-1866 128Mx16 (2Gb) |
MT41J128M16JT-107:K |
Micron |
booking |
|
DDR2
|
| DDR2-800 32Mx16 (512Mb) |
MT47H32M16NF-25E:H |
Micron |
booking |
| DDR2-800 256Mx8 (2Gb) |
MT47H256M8EB-25E:C |
Micron |
booking |
| DDR2-800 128Mx8 (1Gb) |
MT47H128M8SH-25E:M |
Micron |
booking |
| DDR2-800 128Mx16 (2Gb) Ind |
MT47H128M16RT-25E IT:C |
Micron |
booking |
| DDR2-800 64Mx16 FBGA |
MT47H64M16NF-25E:M |
Micron |
booking |
| DDR2-800 128Mx8 (1Gb) Ind |
MT47H128M8SH-25E IT:M |
Micron |
booking |
| DDR2-800 64Mx8 (512Mb) |
MT47H64M8SH-25E:H |
Micron |
booking |
| DDR2-800 64Mx16 BGA |
NT5TU64M16HG-AC |
Nanya |
Booking |
| DDR2-800 32Mx16 (512Mb) Ind |
MT47H32M16NF-25E IT:H |
Micron |
booking |
| DDR2-800 64Mx16 (1Gb) Ind |
MT47H64M16NF-25E IT:M |
Micron |
booking |
|
LPDDR5
|
| LPDDR5 32G 1GX32 FBGA |
MT62F1G32D2DS-026 WT:B |
Micron |
booking |
|
LPDDR4
|
| LPDDR4X-4266 1Gx32 (32Gb) |
K4UBE3D4AA-MGCL |
Samsung |
4 days |
| LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2NP-046 WT:B |
Micron |
booking |
| LPDDR4-4266 512Mx32 (16Gb) |
MT53E512M32D1ZW-046 WT:B |
Micron |
booking |
| LPDDR4-4266 2Gx32 (64Gb) |
MT53E2G32D4DE-046 WT:A |
Micron |
booking |
| LPDDR4X-4266 x32 (16Gb) |
K4U6E3S4AB-MGCL |
Samsung |
3 days |
| LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2FW-046 WT:B |
Micron |
booking |
| LPDDR4-4266 512Mx32 (16Gb) |
K4F6E3S4HM-THCL |
Samsung |
Booking |
| LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2FW-046 AUT:B |
Micron |
booking |
|
Mobile/Low-Power DDR (LPDDR)
|
| LPDDR-400 32Mx16 TSOP Pb-Free |
MT46V32M16P-5B:J |
Micron |
booking |
| LPDDR-400 64Mx8 (512Mb) |
MT46V64M8CY-5B:J |
Micron |
booking |
| LPDDR-400 32Mx32 (1Gb) Ind |
MT46H32M32LFB5-5 IT:B |
Micron |
booking |
| LPDDR-333 16Mx32 VFBGA Low Power |
MT46H16M32LFB5-5 IT:C |
Micron |
booking |
|
Mobile SDRAM (LPSDR)
|
| SD-166 16Mx16 IT |
MT48LC16M16A2P-6A IT:G |
Micron |
booking |
| SD-166 16Mx16 |
MT48LC16M16A2P-6A:G |
Micron |
booking |
| SD 8Mx16-6 PC166 Pb-Free |
MT48LC8M16A2P-6A:L |
Micron |
booking |
| SD 8Mx16-6 PC166 Pb-Free Ind |
MT48LC8M16A2P-6A IT:L |
Micron |
booking |
|
Synchronous Dynamic RAM (SDRAM)
|
| SD 16Mx16-6A 166MHz Ind |
MT48LC16M16A2B4-6A IT:G |
Micron |
booking |
