|
DRAM
|
|
DDR5
|
| DDR5-4800 2Gx8 (16Gb) |
H5CG48MEBDX014N |
SK hynix |
3 days |
| DDR5-5600 4Gbx8 (32Gb) |
K4RBH086VM-BCWM |
Samsung |
2 days |
|
DDR4
|
| DDR4-3200 512Mx16 (8Gb) |
K4A8G165WC-BCWE |
Samsung |
2 days |
| DDR4-3200 512Mx16 (8Gb) |
MT40A512M16LY-062E:E |
Micron |
3 days |
| DDR4-3200 1Gx8 (8Gb) |
H5AN8G8NCJR-XNC |
SK hynix |
5 days |
| DDR4-3200 1Gx8 (8Gb) |
H5AN8G8NDJR-XNC |
SK hynix |
3 days |
| DDR4-3200 1Gx8 (8Gb) |
K4A8G085WC-BCWE |
Samsung |
3 days |
| DDR4-2666 512Mx16 (8Gb) |
H5AN8G6NCJR-VKC |
SK hynix |
3 days |
| DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BCTD |
Samsung |
2 days |
| DDR4-2666 512MX16 (8Gb) |
MT40A512M16LY-075:E |
Micron |
re-confirm |
| DDR4-2666 256Mx16 (4Gb) |
K4A4G165WF-BCTD |
Samsung |
3 days |
| DDR4-2400 512Mx16 (8Gb) |
MT40A512M16JY-083E:B |
Micron |
re-confirm |
| DDR4-2400 256Mx16 (4Gb) |
MT40A256M16GE-083E:B |
Micron |
re-confirm |
| DDR4-3200 512Mx16 (8Gb) |
NT5AD512M16C4-JRI |
Nanya |
2 days |
| DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BCTD000 |
Samsung |
3 days |
| DDR4-3200 512Mx16 (8Gb) Ind |
MT40A512M16TB-062E IT:R |
Micron |
re-confirm |
| DDR4-3200 1Gx16 (16Gb) |
K4AAG165WC-BCWE |
Samsung |
2 days |
| DDR4-3200 1Gx8 (8Gb) |
H5AG38EXNDX026N |
SK hynix |
3 days |
| DDR4-3200 512Mx16 (8Gb) |
K4A8G165WC-BCWE000 |
Samsung |
3 days |
| DDR4-3200 256Mx16 (4Gb) |
K4A4G165WG-BCWE |
Samsung |
2 days |
| DDR4-3200 512Mx16 (8Gb) |
K4A8G165WG-BCWE |
Samsung |
2 days |
| DDR4-3200 512Mx16 (8Gb) |
H5AG36EXNDX017N |
SK hynix |
3 days |
| DDR4-3200 2Gx8 (16Gb) |
H5AG48DXNDX116N |
SK hynix |
3 days |
| DDR4-2666 2Gx4 (8Gb) |
H5AN8G4NJJR-VKC |
SK hynix |
4 days |
|
DDR3
|
| DDR3-1600 1Gx8 (8Gb) 1.35V |
K4B8G0846D-MYK0 |
Samsung |
Re-confirm |
| DDR3-1600 128Mx16 (2Gb) |
MT41J128M16JT-125:K |
Micron |
1 day |
| DDR3-2133 512Mx8 (4Gb) |
K4B4G0846E-BCNB |
Samsung |
3 days |
| DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
MT41K512M8DA-107 IT:P |
Micron |
1 day |
| DDR3-1866 2Gx4 (8Gb) |
H5TQ8G43BMR-RDC |
SK hynix |
Re-confirm |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646E-BYMA |
Samsung |
Booking |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107:P |
Micron |
3 days |
| DDR3-1866 128Mx16 (2Gb) 1.35V |
NT5CC128M16JR-EK |
Nanya |
2 days |
| DDR3-1333 128Mx8 (1Gb) |
IS43TR81280A-15GBLI |
ISSI |
Re-confirm |
| DDR3-1333 2Gx4 (8Gb) |
H5TQ8G43BMR-H9A |
SK hynix |
Re-confirm |
|
DDR2
|
| DDR2-800 32Mx16 (512Mb) BGA |
NT5TU32M16FG-AC |
Nanya |
2 days |
| DDR2-800 64Mx16 Pb-Free |
K4T1G164QJ-BCE7 |
Samsung |
3 days |
| DDR2-800 128Mx8 (1Gb) Ind |
MT47H128M8SH-25E IT:M |
Micron |
re-confirm |
| DDR2-800 128Mx8 (1Gb) |
H5PS1G83KFR-S5C |
SK hynix |
3 days |
| DDR2-800 32Mx16 (512Mb) Ind |
MT47H32M16NF-25E IT:H |
Micron |
re-confirm |
|
LPDDR4
|
| LPDDR4-3200 128Mx32 (4Gb) AAT DDP |
H9HCNNN4KUMLHR-NLO |
SK hynix |
7 days |
| LPDDR4-3733 128Mx32 (4Gb) AUT DDP |
H9HCNNN4KUMLHR-NMP |
SK hynix |
2 days |
| LPDDR4X 256Mx32 (8Gb) |
W66DP2RQQAGJ |
Winbond |
Re-confirm |
|
Mobile/Low-Power DDR (LPDDR)
|
| LPDDR-416 128Mx16 208MHz (2Gb) Ind |
MT46H128M16LFDD-48 IT:C |
Micron |
|
|
SDRAM PC166
|
| SD-166 4Mx16 (64Mb) |
K4S641632N-LC60 |
Samsung |
3 days |
