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Description Part No. Brand Remarks
DRAM
DDR5
DDR5-5600 2Gx8 (16Gb) H5CG48AGBDX018N SK hynix 4 days
DDR4
DDR4-3200 512Mx16 (8Gb) H5AN8G6NDJR-XNC SK hynix 3 days
DDR4-3200 512Mx16 (8Gb) NT5AD512M16C4-JR Nanya 4 days
DDR4-3200 256Mx16 (4Gb) NT5AD256M16E4-JR Nanya 4 days
DDR4-3200 256Mx16 (4Gb) MT40A256M16TB-062E:G Micron 2 days
DDR4-3200 1Gx8 (8Gb) Ind MT40A1G8SA-062E IT:E Micron 1 day
DDR4-3200 1Gx8 (8Gb) H5AN8G8NDJR-XNC SK hynix 4 days
DDR4-3200 1Gx8 (8Gb) K4A8G085WC-BCWE Samsung 2 days
DDR4-3200 1Gx8 (8Gb) MT40A1G8SA-062E:R Micron 2 days
DDR4-3200 1Gx16 (16Gb) K4AAG165WA-BCWE Samsung 1 day
DDR4-2666 512Mx16 (8Gb) K4A8G165WC-BCTD Samsung N/A
DDR4-2666 512Mx16 (8Gb) K4A8G165WC-BITD Samsung 1 day
DDR4-2666 2Gx8 (16Gb) H5ANAG8NCMR-VKC SK hynix N/A
DDR4-2666 256Mx16 (4Gb) H5AN4G6NBJR-VKC SK hynix 2 days
DDR4-2666 1Gx8 (8Gb) MT40A1G8SA-075:E Micron 2 days
DDR4-2666 1Gx16 (16Gb) K4AAG165WA-BCTD Samsung Booking
DDR4-2400 256Mx16 (4Gb) H5AN4G6NBJR-UHC SK hynix 1 day
DDR4-3200 256Mx16 (4Gb) Ind. NT5AD256M16E4-JRI Nanya 4 days
DDR4-3200 512Mx16 (8Gb) MT40A512M16TB062E:R Micron 2 days
DDR3
DDR3-1600 1Gx8 (8Gb) 1.35V K4B8G0846D-MYK0 Samsung 3 days
DDR3-1600 256Mx16 (4Gb) IS43TR16256BL-125KBLI ISSI Booking
DDR3-1600 128Mx16 (2Gb) Ind 1.35V MT41K128M16JT-125 IT:K Micron 1 day
DDR3-2133 64Mx16 (1Gb) K4B1G1646I-BCNB Samsung 3 days
DDR3-2133 256Mx16 (4Gb) K4B4G1646E-BCNB Samsung 2 days
DDR3-1866 64Mx16 (1Gb) Ind 1.35V K4B1G1646I-BMMA Samsung 3 days
DDR3-1866 512Mx8 (4Gb) 1.35V MT41K512M8DA-107:P Micron Booking
DDR3-1866 512Mx8 (4Gb) K4B4G0846E-BCMA Samsung 2 days
DDR3-1866 512Mx16 (8Gb) Ind 1.35V MT41K512M16VRP-107 IT:P Micron 3 days
DDR3-1866 256Mx8 (2Gb) 1.35V K4B2G0846F-BYMA Samsung 2 days
DDR3-1866 256Mx8 (2Gb) 1.35V NT5CC256M8JQ-EK Nanya 2 days
DDR3-1866 256Mx16 (4Gb) 1.35V Ind NT5CC256M16ER-EKI Nanya 2 days
DDR3-1866 256Mx16 (4Gb) 1.35V K4B4G1646E-BYMA Samsung 4 days
DDR3-1866 256Mx16 (4Gb) 1.35V MT41K256M16TW-107 AIT:P Micron booking
DDR3-1866 256Mx16 (4Gb) 1.35V MT41K256M16TW-107:P Micron 6 days
DDR3-1866 256Mx16 (4Gb) 1.35V NT5CC256M16ER-EK Nanya 3 days
DDR3-1866 256Mx16 (4Gb) NT5CB256M16DP-EK Nanya 2 days
DDR3-1866 128Mx16 (2Gb) AutoG 1.35V K4B2G1646F-BHMA Samsung 7 days
DDR3-1866 128Mx16 (2Gb) 1.35V NT5CC128M16JR-EK Nanya 2 days
DDR3-1866 128Mx16 (2Gb) H5TQ2G63GFR-RDC SK hynix N/A
DDR3-1866 128Mx16 (2Gb) IS43TR16128DL-107MBLI ISSI Booking
DDR3-1600 64Mx16 (1Gb) 1.35V NT5CC64M16GP-DI Nanya 2 days
DDR2
DDR2-800 128Mx8 Pb-Free K4T1G084QJ-BCE7 Samsung 3 days
DDR2-800 128Mx8 Ind NT5TU128M8GE-ACI Nanya 5 days
LPDDR5
LPDDR5 32G 1GX32 FBGA MT62F1G32D2DS-026 WT:B Micron 7 days
LPDDR4
LPDDR4X-4266 x32 (32Gb) H9HCNNNCPMMLXR-NEE SK hynix 5 days
LPDDR4-4266 (32Gb) H9HCNNNCPUMLXR-NEE SK hynix 10 days
LPDDR4-4266 1Gx32 (32Gb) MT53D1024M32D4DT-046 WT:D Micron 2 days
LPDDR4-3733 1Gx32 (32Gb) MT53D1024M32D4DT-053 WT:D Micron 5 days
LPDDR4X-4266 x32 (16Gb) K4U6E3S4AA-MGCL Samsung 1 day
LPDDR4-4266 256Mx32 (8Gb) K4F8E3S4HD-GHCL Samsung Booking
LPDDR4X-4266 x32 (16Gb) K4U6E3S4AB-MGCL Samsung 2 days
LPDDR4-4266 1Gx32 (32Gb) MT53E1G32D2FW-046 WT:B Micron 2 days
LPDDR4-4266 128Mx32 (4Gb) AIT MT53E128M32D2FW-046 AIT:A Micron 10 days
LPDDR4X-4266 x32 (32Gb) K4UBE3D4AB-MGCL Samsung 2 days
LPDDR4-4266 2Gx32 (64Gb) MT53E2G32D4DE-046 WT:C Micron 2 days
LPDDR3
LPDDR3-1866 512Mx32 (16Gb) NT6CL512T32AM-H1 Nanya 2 days
LPDDR3-1866 256Mx32 (8Gb) NT6CL256M32AM-H1 Nanya 2 days
LPDDR2
LPDDR2-800 128Mx32 MT42L128M32D1TK-25 AAT:A Micron 10 days
GDDR6 SDRAM/SGRAM
GDDR6 256Mx32 7GHz (8Gb) H56C8H24AIR-S2C SK hynix 5 days
Mobile SDRAM (LPSDR)
Mobile SD 16Mx32 PC133 Pb-Free K4M51323PI-HG75 Samsung 3 days
SD 2Mx32-6 166MHz Pb-Free MT48LC2M32B2P-6A:J Micron 5 days