|
DRAM
|
|
DDR4
|
| DDR4-3200 512Mx8 (4Gb) |
NT5AD512M8E3-JR |
Nanya |
5 days |
| DDR4-3200 512Mx16 (8Gb) |
K4A8G165WC-BCWE |
Samsung |
7 days |
| DDR4-3200 256Mx16 (4Gb) |
NT5AD256M16E4-JR |
Nanya |
7 days |
| DDR4-3200 1Gx16 (16Gb) |
K4AAG165WA-BCWE |
Samsung |
1 day |
| DDR4-3200 1Gx16 (16Gb) Ind |
MT40A1G16RC-062E IT:B |
Micron |
5 days |
| DDR4-2666 512Mx8 (4Gb) |
K4A4G085WF-BCTD |
Samsung |
7 days |
| DDR4-2666 1Gx8 (8Gb) |
K4A8G085WC-BCTD |
Samsung |
N/A |
| DDR4-2666 1Gx8 (8Gb) |
MT40A1G8SA-075:E |
Micron |
3 days |
|
DDR3
|
| DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
MT41K128M16JT-125 IT:K |
Micron |
3 days |
| DDR3-2133 256Mx16 (4Gb) |
K4B4G1646E-BCNB |
Samsung |
1 day |
| DDR3-2133 128Mx16 (2Gb) |
K4B2G1646F-BCNB |
Samsung |
N/A |
| DDR3-1866 512Mx8 (4Gb) 1.35V |
K4B4G0846E-BYMA |
Samsung |
1 day |
| DDR3-1866 512Mx8 (4Gb) 1.35V |
MT41K512M8DA-107:P |
Micron |
N/A |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646D-BYMA |
Samsung |
N/A |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646E-BYMA |
Samsung |
1 day |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107:P |
Micron |
5 days |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
NT5CC256M16ER-EK |
Nanya |
7 days |
| DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
K4B2G1646F-BMMA |
Samsung |
1 day |
| DDR3-1866 128Mx16 (2Gb) 1.35V |
K4B2G1646F-BYMA |
Samsung |
1 day |
|
DDR2
|
| DDR2-800 128Mx16 (2Gb) |
MT47H128M16RT-25E:C |
Micron |
5 days |
|
LPDDR4
|
| LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2NP-046 WT:A |
Micron |
3 days |
| LPDDR4-4266 256Mx32 (8Gb) |
K4F8E3S4HD-MGCL |
Samsung |
2 days |
|
GDDR6 SDRAM/SGRAM
|
| GDDR6 14Gb/s 512Mx32 (16Gb) |
K4ZAF325BM-HC14 |
Samsung |
1 day |
| GDDR6 16Gb/s 512Mx32 (16Gb) |
K4ZAF325BC-SC16 |
Samsung |
Booking |
