DRAM
|
DDR5
|
DDR5-5600 2Gx8 (16Gb) |
H5CG48AGBDX018N |
SK hynix |
2 days |
DDR5-5600 1Gx16 (16Gb) |
K4RAH165VP-BCWM |
Samsung |
5 days |
DDR4
|
DDR4-3200 512Mx16 (8Gb) |
H5AN8G6NDJR-XNC |
SK hynix |
3 days |
DDR4-3200 512Mx16 (8Gb) |
K4A8G165WC-BCWE |
Samsung |
3 days |
DDR4-3200 512Mx16 (8Gb) |
K4A8G165WC-BIWE |
Samsung |
3 days |
DDR4-3200 2Gx8 (16Gb) |
H5ANAG8NAJR-XNC |
SK hynix |
2 days |
DDR4-3200 256Mx16 (4Gb) |
K4A4G165WF-BCWE |
Samsung |
4 days |
DDR4-3200 1Gx8 (8Gb) |
H5AN8G8NDJR-XNC |
SK hynix |
3 days |
DDR4-3200 1Gx8 (8Gb) |
K4A8G085WC-BCWE |
Samsung |
3 days |
DDR4-3200 1Gx8 (8Gb) |
MT40A1G8SA-062E:R |
Micron |
3 days |
DDR4-3200 1Gx16 (16Gb) |
H5ANAG6NCJR-XNC |
SK hynix |
1 day |
DDR4-3200 1Gx16 (16Gb) |
K4AAG165WA-BCWE |
Samsung |
3 days |
DDR4-3200 1Gx16 (16Gb) Ind |
MT40A1G16TB-062E IT:F |
Micron |
1 week |
DDR4-2666 512Mx8 (4Gb) |
NT5AD512M8D3-HR |
Nanya |
2 days |
DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BCTD |
Samsung |
2 days |
DDR4-2666 512MX16 (8Gb) |
MT40A512M16LY-075:E |
Micron |
1 day |
DDR4-2666 256Mx16 (4Gb) |
K4A4G165WF-BCTD |
Samsung |
3 days |
DDR4-2666 1Gx8 (8Gb) |
K4A8G085WC-BCTD |
Samsung |
3 days |
DDR4-2666 1Gx16 (16Gb) DDP |
K4AAG165WB-MCTD |
Samsung |
3 days |
DDR4-2666 1Gx16 (16Gb) |
K4AAG165WA-BCTD |
Samsung |
3 days |
DDR4-2400 512Mx16 (8Gb) |
K4A8G165WB-BCRC |
Samsung |
7 days |
DDR4-2400 256Mx16 (4Gb) |
K4A4G165WE-BCRC |
Samsung |
4 days |
DDR4-3200 4Gx4 (16Gb) |
H5ANAG4NCJR-XNC |
SK hynix |
N/A |
DDR4-3200 1Gx16 (16Gb) Ind |
MT40A1G16TB-062E IT:E |
Micron |
1 week |
DDR3
|
DDR3-1600 512Mx16 (8Gb) 1.35V |
K4B8G1646D-MYK0 |
Samsung |
1 day |
DDR3-1600 256Mx16 (4Gb) 1.35V |
NT5CC256M16DP-DI |
Nanya |
3 days |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
K4B2G1646F-BMK0 |
Samsung |
1 day |
DDR3-1600 128Mx16 (2Gb) |
MT41J128M16JT-125:K |
Micron |
booking |
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
MT41K128M16JT-125 AAT:K |
Micron |
1 week |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
MT41K128M16JT-125 IT:K |
Micron |
1 day |
DDR3-2133 256Mx16 (4Gb) |
K4B4G1646E-BCNB |
Samsung |
3 days |
DDR3-1866 64Mx16 (1Gb) 1.35V |
MT41K64M16TW-107 AIT:J |
Micron |
5 days |
DDR3-1866 512Mx8 (4Gb) 1.35V |
K4B4G0846E-BYMA |
Samsung |
3 days |
DDR3-1866 512Mx8 (4Gb) 1.35V |
NT5CC512M8EN-EK |
Nanya |
Booking |
DDR3-1866 256Mx16 (4Gb) Ind 1.35V |
K4B4G1646E-BMMA |
Samsung |
3 days |
DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646D-BYMA |
Samsung |
booking |
DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646E-BYMA |
Samsung |
1 day |
DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107 AAT:P |
Micron |
1 week |
DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107:P |
Micron |
1 day |
DDR3-1866 256Mx16 (4Gb) 1.35V |
NT5CC256M16ER-EK |
Nanya |
3 days |
DDR3-1866 256Mx16 (4Gb) |
H5TQ4G63EFR-RDC |
SK hynix |
2 days |
DDR3-1866 256Mx16 (4Gb) |
K4B4G1646E-BCMA |
Samsung |
1 day |
DDR3-1866 128Mx8 (1Gb) 1.35V |
MT41K128M8DA-107:J |
Micron |
booking |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
K4B2G1646F-BMMA |
Samsung |
2 days |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
MT41K128M16JT-107 IT:K |
Micron |
Booking |
DDR3-1866 128Mx16 (2Gb) 1.35V |
NT5CC128M16JR-EK |
Nanya |
1 day |
DDR2
|
DDR2-800 128Mx8 |
NT5TU128M8HE-AC |
Nanya |
7 days |
DDR2-800 64Mx8 (512Mb) |
MT47H64M8SH-25E:H |
Micron |
1 day |
DDR2-800 64Mx16 BGA |
NT5TU64M16HG-AC |
Nanya |
5 days |
DDR2-800 64Mx16 (1Gb) |
W971GG6NB-25 |
Winbond |
booking |
LPDDR5
|
LPDDR5-6400 (32Gb) |
H58G56AK6BX069N |
SK hynix |
4 days |
LPDDR4
|
LPDDR4-3733 1Gx32 (32Gb) |
K4FBE3D4HM-MGCJ |
Samsung |
4 days |
LPDDR4X-4266 x32 (8Gb) |
K4U8E3S4AD-MGCL |
Samsung |
3 days |
LPDDR4X-4266 (16Gb) |
H9HCNNNBKMMLXR-NEE |
SK hynix |
1 day |
LPDDR4-4266 (16Gb) |
H9HCNNNBKUMLXR-NEE |
SK hynix |
3 days |
LPDDR4-3733 512Mx32 (16Gb) |
K4F6E304HB-MGCJ |
Samsung |
2 days |
LPDDR4-3733 512Mx32 (16Gb) |
K4F6E3S4HM-MGCJ |
Samsung |
3 days |
LPDDR4X-4266 x32 (16Gb) |
K4U6E3S4AA-MGCL |
Samsung |
3 days |
LPDDR4-3733 512Mx32 (16Gb) |
MT53D512M32D2DS-053 WT:D |
Micron |
1 week |
LPDDR4-4266 256Mx32 (8Gb) |
K4F8E3S4HD-GHCL |
Samsung |
1 week |
LPDDR4-4266 256Mx32 (8Gb) |
K4F8E3S4HD-MGCL |
Samsung |
3 days |
LPDDR4X-4266 x32 (16Gb) |
K4U6E3S4AB-MGCL |
Samsung |
4 days |
LPDDR4-4266 1Gx64 (64Gb) |
MT53E1G64D4NW-046 WT:C |
Micron |
3 days |
LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2FW-046 WT:B |
Micron |
1 week |
LPDDR4X-4266 x32 (32Gb) |
K4UBE3D4AB-MGCL |
Samsung |
2 days |
LPDDR4-4266 256Mx32 (8Gb) |
MT53E256M32D1KS-046 IT:L |
Micron |
4 days |
LPDDR4-3733 x32 (8Gb) DDP |
H9HCNNN8KUMLHR-NMO |
SK hynix |
booking |
Mobile/Low-Power DDR (LPDDR)
|
LPDDR-400 64Mx16 (1Gb) Ind |
MT46H64M16LFBF-5 IT:B |
Micron |
3 days |
GDDR6 SDRAM/SGRAM
|
GDDR6 16Gb/s 256Mx32 (8Gb) |
K4Z80325BC-HC16 |
Samsung |
3 days |
GDDR6 16Gb/s 512Mx32 (16Gb) |
K4ZAF325BC-SC16 |
Samsung |
1 week |
Synchronous Dynamic RAM (SDRAM)
|
SD 16Mx16-6A 166MHz Ind |
MT48LC16M16A2B4-6A IT:G |
Micron |
3 days |