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產品描述 料號 品牌 備注
DRAM
DDR4
DDR4-3200 256Mx16 (4Gb) MT40A256M16LY-062E AUT:F Micron 5 days
DDR4-3200 256Mx16 (4Gb) MT40A256M16TB-062E:G Micron 2 days
DDR4-3200 1Gx8 (8Gb) H5AN8G8NDJR-XNC SK hynix 3 days
DDR4-2666 512Mx8 (4Gb) K4A4G085WF-BCTD Samsung 3 days
DDR4-2666 512Mx8 (4Gb) NT5AD512M8D3-HR Nanya 5 days
DDR4-2666 512Mx16 (8Gb) K4A8G165WC-BCTD Samsung 2 days
DDR4-2666 1Gx8 (8Gb) K4A8G085WB-BCTD Samsung 3 days
DDR4-2400 1Gx8 (8Gb) K4A8G085WB-BCRC Samsung 1 day
DDR4-3200 2Gx16 (32Gb) MT40A2G16TBB-062E:F Micron 3 days
DDR3
DDR3-1600 512Mx8 (4Gb) 1.35V K4B4G0846Q-HYK0 Samsung 5 days
DDR3-1600 512Mx8 (4Gb) 1.35V MT41K512M8RH-125:E Micron 5 days
DDR3-1600 128Mx16 (2Gb) AutoG 1.35V MT41K128M16JT-125 AAT:K Micron Booking
DDR3-1333 64Mx16 (1Gb) Ind MT41J64M16JT-15E IT:G Micron 5 days
DDR3-1866 64Mx16 (1Gb) Ind 1.35V MT41K64M16TW-107 IT:J Micron 5 days
DDR3-1866 512Mx8 (4Gb) Ind 1.35V NT5CC512M8EQ-EKI Nanya 3 days
DDR3-1866 512Mx8 (4Gb) AutoG2 1.35V NT5CC512M8EQ-EKH Nanya 3 days
DDR3-1866 512Mx8 (4Gb) 1.35V H5TC4G83EFR-RDA SK hynix 3 days
DDR3-1866 256Mx16 (4Gb) Ind 1.35V MT41K256M16TW-107 IT:P Micron 2 days
DDR3-1866 128Mx16 (2Gb) Ind 1.35V K4B2G1646F-BMMA Samsung 6 days
DDR2
DDR2-667 32Mx16 Pb-Free K4T51163QQ-BCE6 Samsung 5 days
DDR2-800 32Mx16 (512Mb) Ind MT47H32M16NF-25E IT:H Micron 5 days
LPDDR4
LPDDR4-3733 1Gx32 (32Gb) K4FBE3D4HM-MGCJ Samsung 4 days
LPDDR4X-4266 x32 (8Gb) K4U8E3S4AD-MGCL Samsung 5 days
LPDDR4-3733 512Mx32 (16Gb) MT53D512M32D2DS-053 WT:D Micron 5 days
LPDDR4-4266 512Mx32 (16Gb) MT53E512M32D1ZW-046 WT:B Micron Booking
LPDDR4-4266 256Mx32 (8Gb) K4F8E3S4HD-GFCL Samsung Booking
LPDDR4-4266 512Mx32 (16Gb) Ind MT53E512M32D1ZW-046 IT:B Micron 2 days
LPDDR4X-4266 x32 (16Gb) K4U6E3S4AB-MGCL Samsung 4 days
LPDDR4X-4266 x32 (32Gb) K4UBE3D4AB-MGCL Samsung 5 days
High Bandwidth Memory (HBM)
HBM2 2Gb/s 8Gb KHA884901X-MC12T Samsung 5 days
GDDR6 SDRAM/SGRAM
GDDR6 16Gb/s 256Mx32 (8Gb) K4Z80325BC-HC16 Samsung 5 days
DDR 400
DDR-400 32Mx16 Pb-Free K4H511638G-LCCC Samsung 5 days