|
DRAM
|
|
DDR5
|
| DDR5-5600 2Gx8 (16Gb) |
H5CG48AGBDX018N |
SK hynix |
4 days |
|
DDR4
|
| DDR4-3200 512Mx16 (8Gb) |
H5AN8G6NDJR-XNC |
SK hynix |
3 days |
| DDR4-3200 512Mx16 (8Gb) |
MT40A512M16LY-062E:E |
Micron |
2 days |
| DDR4-3200 512Mx16 (8Gb) |
NT5AD512M16C4-JR |
Nanya |
4 days |
| DDR4-3200 2Gx16 (32Gb) |
K4ABG165WA-MCWE |
Samsung |
N/A |
| DDR4-3200 256Mx16 (4Gb) |
NT5AD256M16E4-JR |
Nanya |
4 days |
| DDR4-3200 1Gx8 (8Gb) Ind |
MT40A1G8SA-062E IT:E |
Micron |
1 day |
| DDR4-3200 1Gx8 (8Gb) |
H5AN8G8NDJR-XNC |
SK hynix |
4 days |
| DDR4-3200 1Gx8 (8Gb) |
MT40A1G8SA-062E:R |
Micron |
2 days |
| DDR4-2666 512Mx16 (8Gb) |
K4A8G165WC-BCTD |
Samsung |
N/A |
| DDR4-2666 512MX16 (8Gb) |
MT40A512M16LY-075:E |
Micron |
2 days |
| DDR4-2666 256Mx16 (4Gb) |
K4A4G165WF-BCTD |
Samsung |
2 days |
| DDR4-2666 1Gx8 (8Gb) |
MT40A1G8SA-075:E |
Micron |
2 days |
| DDR4-2666 1Gx16 (16Gb) |
K4AAG165WA-BCTD |
Samsung |
Booking |
| DDR4-3200 512Mx16 (8Gb) |
MT40A512M16TB062E:R |
Micron |
2 days |
|
DDR3
|
| DDR3-1600 256Mx16 (4Gb) |
IS43TR16256BL-125KBLI |
ISSI |
Booking |
| DDR3-1600 128Mx16 (2Gb) AutoG 1.35V |
MT41K128M16JT-125 AAT:K |
Micron |
7 days |
| DDR3-1866 512Mx16 (8Gb) Ind 1.35V |
MT41K512M16VRP-107 IT:P |
Micron |
3 days |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
K4B4G1646E-BYMA |
Samsung |
4 days |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
MT41K256M16TW-107:P |
Micron |
6 days |
| DDR3-1866 256Mx16 (4Gb) 1.35V |
NT5CC256M16ER-EK |
Nanya |
3 days |
| DDR3-1866 128Mx16 (2Gb) AutoG 1.35V |
K4B2G1646F-BHMA |
Samsung |
7 days |
| DDR3-1866 128Mx16 (2Gb) 1.35V |
K4B2G1646F-BYMA |
Samsung |
Stock HK |
| DDR3-1866 128Mx16 (2Gb) 1.35V |
NT5CC128M16JR-EK |
Nanya |
1 day |
| DDR3-1866 128Mx16 (2Gb) |
H5TQ2G63GFR-RDC |
SK hynix |
N/A |
| DDR3-1866 128Mx16 (2Gb) |
IS43TR16128DL-107MBLI |
ISSI |
Booking |
|
LPDDR5
|
| LPDDR5-7500 1Gx32 TFBGA (32Gb) |
MT62F1G32D2DS-026 WT:B |
Micron |
7 days |
|
LPDDR4
|
| LPDDR4X-4266 x32 (32Gb) |
H9HCNNNCPMMLXR-NEE |
SK hynix |
5 days |
| LPDDR4-4266 (32Gb) |
H9HCNNNCPUMLXR-NEE |
SK hynix |
Booking |
| LPDDR4-4266 1Gx32 (32Gb) |
MT53D1024M32D4DT-046 WT:D |
Micron |
2 days |
| LPDDR4-3733 1Gx32 (32Gb) |
MT53D1024M32D4DT-053 WT:D |
Micron |
5 days |
| LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2NP-046 WT:B |
Micron |
2 days |
| LPDDR4-4266 (16Gb) |
H9HCNNNBKUMLXR-NEE |
SK hynix |
5 days |
| LPDDR4X-4266 x32 (16Gb) |
K4U6E3S4AA-MGCL |
Samsung |
1 day |
| LPDDR4-4266 256Mx32 (8Gb) |
K4F8E3S4HD-GHCL |
Samsung |
Booking |
| LPDDR4X-4266 x32 (16Gb) |
K4U6E3S4AB-MGCL |
Samsung |
2 days |
| LPDDR4-4266 1Gx32 (32Gb) |
MT53E1G32D2FW-046 WT:B |
Micron |
2 days |
| LPDDR4-4266 128Mx32 (4Gb) AIT |
MT53E128M32D2FW-046 AIT:A |
Micron |
10 days |
| LPDDR4X-4266 x32 (32Gb) |
K4UBE3D4AB-MGCL |
Samsung |
2 days |
| LPDDR4-4266 2Gx32 (64Gb) |
MT53E2G32D4DE-046 WT:C |
Micron |
2 days |
|
LPDDR2
|
| LPDDR2-800 128Mx32 |
MT42L128M32D1TK-25 AAT:A |
Micron |
10 days |
