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19 Years of Innovation EN | 中文
    
    
產品描述 料號 品牌 備注
DRAM
DDR5
DDR5-5600 2Gx8 (16Gb) H5CG48AGBDX018N SK hynix 4 days
DDR4
DDR4-3200 512Mx16 (8Gb) H5AN8G6NDJR-XNC SK hynix 1 day
DDR4-3200 512Mx16 (8Gb) MT40A512M16TB-062E:R Micron 1 day
DDR4-3200 2Gx8 (16Gb) H5ANAG8NCJR-XNC SK hynix 3 days
DDR4-3200 2Gx8 (16Gb) Ind MT40A2G8VA-062E IT:B Micron 3 days
DDR4-3200 2Gx4 (8Gb) MT40A2G4SA-062E:R Micron Booking
DDR4-3200 256Mx16 (4Gb) NT5AD256M16E4-JR Nanya 1 day
DDR4-3200 1Gx8 (8Gb) H5AN8G8NCJR-XNC SK hynix 2 days
DDR4-3200 1Gx8 (8Gb) H5AN8G8NDJR-XNC SK hynix 1 day
DDR4-3200 1Gx8 (8Gb) K4A8G085WC-BCWE Samsung 2 days
DDR4-3200 1Gx8 (8Gb) K4A8G085WC-BIWE Samsung Booking
DDR4-3200 1Gx8 (8Gb) MT40A1G8SA-062E:E Micron 5 days
DDR4-3200 1Gx16 (16Gb) H5ANAG6NCJR-XNC SK hynix 1 day
DDR4-3200 1Gx16 (16Gb) K4AAG165WA-BCWE Samsung Booking
DDR4-2666 512Mx8 (4Gb) H5AN4G8NBJR-VKC SK hynix 5 days
DDR4-2666 512Mx8 (4Gb) NT5AD512M8D3-HR Nanya re-confirm
DDR4-2666 512Mx16 (8Gb) H5AN8G6NDJR-VKC SK hynix 4 days
DDR4-2666 512Mx16 (8Gb) K4A8G165WC-BCTD Samsung 1 day
DDR4-2666 2Gx4 (8Gb) K4A8G045WC-BCTD Samsung Booking
DDR4-2666 256Mx16 (4Gb) H5AN4G6NBJR-VKC SK hynix 1 day
DDR4-2666 1Gx16 (16Gb) K4AAG165WA-BCTD Samsung 4 days
DDR4-2400 512Mx8 (4Gb) H5AN4G8NBJR-UHC SK hynix re-confirm
DDR4-2400 256Mx16 (4Gb) H5AN4G6NBJR-UHC SK hynix 2 days
DDR4-2400 1Gx8 (8Gb) H5AN8G8NAFR-UHC SK hynix 3 days
DDR4-3200 2Gx8 (16Gb) Ind MT40A2G8SA-062E IT:F Micron 3 days
DDR3
DDR3-1600 256Mx8 (2Gb) 1.35V MT41K256M8DA-125:K Micron 5 days
DDR3-2133 64Mx16 (1Gb) K4B1G1646I-BCNB Samsung 3 days
DDR3-1866 512Mx8 (4Gb) 1.35V H5TC4G83EFR-RDAR SK hynix Booking
DDR3-1866 512Mx8 (4Gb) 1.35V MT41K512M8DA-107:P Micron booking
DDR3-1866 256Mx8 (2Gb) Ind 1.35V K4B2G0846F-BMMA Samsung 1 day
DDR3-1866 256Mx8 (2Gb) 1.35V NT5CC256M8JQ-EK Nanya 1 day
DDR3-1866 256Mx16 (4Gb) 1.35V Ind NT5CC256M16ER-EKI Nanya 1 day
DDR3-1866 256Mx16 (4Gb) 1.35V H5TC4G63EFR-RDA SK hynix 1 day
DDR3-1866 256Mx16 (4Gb) 1.35V K4B4G1646E-BYMA Samsung 1 day
DDR3-1866 256Mx16 (4Gb) 1.35V MT41K256M16TW-107:P Micron booking
DDR3-1866 256Mx16 (4Gb) 1.35V NT5CC256M16EP-EK Nanya 1 day
DDR3-1866 256Mx16 (4Gb) 1.35V NT5CC256M16ER-EK Nanya 1 day
DDR3-1866 256Mx16 (4Gb) H5TQ4G63EFR-RDC SK hynix 1 day
DDR3-1866 256Mx16 (4Gb) NT5CB256M16DP-EK Nanya 1 day
DDR3-1866 128Mx16 (2Gb) 1.35V NT5CC128M16JR-EK Nanya 1 day
DDR3-1600 64Mx16 (1Gb) 1.35V NT5CC64M16GP-DI Nanya 1 day
DDR3-1866 256Mx16 (4Gb) D2516ECMDXGJDI-R Kingston re-confirm
DDR2
DDR2-800 32Mx16 Pb-Free Halogen-Free K4T51163QN-BCE7 Samsung 1 day
DDR2-800 32Mx16 (512Mb) BGA NT5TU32M16FG-AC Nanya 1 day
DDR2-800 128Mx16 (2Gb) MT47H128M16RT-25E:C Micron booking
DDR2-800 64Mx16 BGA NT5TU64M16HG-AC Nanya 1 day
DDR2-800 32Mx16 EM68B16CWQK-25H Etron re-confirm
LPDDR5
LPDDR5-6400 x64 (64Gb) K3LK7K70BM-BGCP Samsung 2 days
LPDDR4
LPDDR4X-4266 x32 (32Gb) H9HCNNNCPMMLXR-NEE SK hynix 3 days
LPDDR4X-4266 x64 (32Gb) K3UH5H50AM-JGCL Samsung 2 days
LPDDR4-4266 512Mx32 (16Gb) MT53D512M32D2DS-046 AAT:D Micron booking
LPDDR4-3733 x32 (8Gb) DDP H9HCNNN8KUMLHR-NME SK hynix 3 days
LPDDR4-4266 256Mx32 (8Gb) K4F8E3S4HD-MGCL Samsung 3 days
LPDDR4-3200 128Mx32 (4Gb) AAT DDP H9HCNNN4KUMLHR-NLO SK hynix 2 days
LPDDR4-3733 128Mx32 (4Gb) K4F4E3S4HF-MGCJ Samsung 2 days
LPDDR4X-4266 x32 (32Gb) K4UBE3D4AB-MGCL Samsung 2 days
LPDDR4-4266 256Mx32 (8Gb) MT53E256M32D1KS-046 IT:L Micron 4 days
LPDDR3
LPDDR3-1866 512Mx32 (16Gb) NT6CL512T32AM-H1 Nanya 1 day
LPDDR3-1866 256Mx32 (8Gb) NT6CL256M32AM-H1 Nanya 1 day
LPDDR3-2133 256Mx32 (8Gb) NT6CL256M32AM-H0 Nanya Booking
SDRAM PC166
SD 4Mx16-6 PC166 EM638165TS-6G Etron Booking
SDRAM PC133
SD 8Mx16-6 EM639165TS-6G Etron N/A